Substitution effect on orientation of organosilicon compounds (CH)SiX (X = F, Cl, Br, I, NCO) as studied using NEXAFS spectroscopy

Sekiguchi, Tetsuhiro; Baba, Yuji; Shimoyama, Iwao; Nath, K. G.*; Uddin, M. N.*

Journal of Physics; Condensed Matter, 17(36), p.5453 - 5466, 2005/09

https://doi.org/10.1088/0953-8984/17/36/002

The orientation nature of multilayer organosilicon compounds has been investigated by measuring the dependence of the Si K-shell near-edge X-ray absorption fine structures (NEXAFS) on the polarization angle. Two approaches helped to elucidate the orientation mechanism: the substitution effect and the deposition-rate dependence. The orientation angles of Si-X bond axes were obtained for trimethylsilyl halides, (CH)SiX (X =F Cl Br I NCO, condensed on Cu(111) at a low (82 K) temperature: the angles are 60, 73, 61, 55, and 55 degrees with respect to the surface normal, for X =F, Cl, Br, I, and NCO, respectively. Chloride (X =Cl) produces the most parallel tilt angle. The specific orientation nature of chloride is attributed to its strong dipole moment as well as the regular tetrahedron shape of the molecule. The molecular volumes calculated verify this view. Furthermore, deposition rates are found to greatly influence the growth manner: namely, high deposition rates led to a slightly perpendicular orientation of Si-X bond axis.

Site-specific fragmentation of acetone adsorbates on Si(100) in the carbon 1s absorption edge

Sekiguchi, Tetsuhiro; Sekiguchi, Hiromi*; Baba, Yuji

Surface Science, 454-456, p.363 - 368, 2000/05

https://doi.org/10.1016/S0039-6028(00)00284-3

no abstracts in English

Design of radial neutron spectrometer for ITER

Nishitani, Takeo; Iguchi, Tetsuo*; Ebisawa, Katsuyuki*; *; Kasai, Satoshi

JAERI-Tech 96-038, 29 Pages, 1996/09

JAERI-Tech-96-038.pdf:1.17MB

no abstracts in English

Incident angle dependence of residual defect in silicon surface barrier detector

Kanno, Ikuo; Ikezoe, Hiroshi; Otsuki, Tsutomu*; *; *; Kimura, Itsuro*

Journal of Nuclear Science and Technology, 28(6), p.582 - 584, 1991/06

https://doi.org/10.3327/jnst.28.582

no abstracts in English

A Model of charge collection in a silicon surface barrier detector

Kanno, Ikuo

Review of Scientific Instruments, 61(1), p.129 - 137, 1990/01

https://doi.org/10.1063/1.1141888

no abstracts in English